集成电路制造技术复习笔记：第十二章

工艺集成

金属化与多层互连

金属化材料可分为三大类:

• 互连材料
• 接触材料
• MOSFET栅电极材料

布线技术

电迁移现象：在大电流密度作用下金属化引线的质量输运现象。

金属化引线的电迁移现象，在负极附近易形成空洞,正极附近易形成小丘。

多层互联

双大马士革法

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加载更多

IC集成度

CMOS集成电路工艺

隔离工艺

阱工艺结构

栅电极材料与难溶金属硅化物自对准工艺

优点：避免了对准误差

CMOS电路工艺流程