PN结工艺仿真

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go athena
# 网格定义
line x location=0.0   spac=0.05
line x location=1.0   spac=0.05
line y location=0.0   spac=0.10
line y location=3.0   spac=0.10

# n型硅，掺杂浓度为1e10^14
init silicon c.phos=1.0e14
diffus time=400 temp=1000 dryo2

# 刻蚀第一个窗口
etch oxide start x=0.2 y=2
etch continue    x=0.2 y=-0.6
etch continue    x=0.4 y=-0.6
etch done        x=0.4 y=2

# 热扩散，硼预淀积浓度为1e20
method fermi compress
diffus time=10 temp=800 c.boron=1.0e20
diffus time=5 temp=1000 nitro press=1.0

# 刻蚀第二个窗口
etch oxide start x=0.6 y=2
etch continue    x=0.6 y=-0.6
etch continue    x=0.8 y=-0.6
etch done        x=0.8 y=2

# 淀积铝
deposit alum thick=0.2 div=2

# CMP抛光
rate.polish alum machine=cmp u.m max.hard=0.16 min.hard=0.04 isotropic=0.01
rate.polish oxide machine=cmp u.m max.hard=0.16 min.hard=0.04 isotropic=0.01
polish machine=cmp time=5 min

# 电极定义
electrode name=anode x=0.3 y=0.1
electrode name=cathode x=0.7 y=0.1

# 输出
save outf='R:/b.str'
tonyplot R:/b.str
structure outfile=boron_implant.str

IV特性曲线

内容可能错误

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go atlas
init infile='R:/boron_implant.str'

# 设定温度
model conmob fldmob temp=100

method newton
contact name=anode
contact name=cathode

log outf='R:/iv.log' master

# 初始化
solve init
# 设定阳极电压范围
solve vanode=0 vstep=1 vfinal=3 name=anode
# 阴极电压为0
solve vcathode=0 name=cathode

# 输出
tonyplot R:/iv.log

好像饱和电流太小了