实验本意是好的，只是学生操作的时候出了点问题
关键代码
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| ;;;;;;;;;;;;;;;;;;;;;;;;;;; n1-dvs.cmd ;;;;;;;;;;;;;;;;;;;;;;
(sde:clear)
(sde:set-process-up-direction "+z")
(sdegeo:set-default-boolean "ABA")
;vertical parameters
(define TPP 3.0)
(define TN 5.0)
(define TNN 2.0)
;********************************* Create region **********************************
;-create Si
(sdegeo:create-rectangle
(position 0.0 0.0 0.0)
(position 5.0 10.0 0.0)
"Silicon" "R.Si")
;***************************************** Doping **********************************
;PP doping
; Constant doping profile in a box-shaped area
(define NAME "PP")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "AluminumActiveConcentration"
(sdedr:define-refinement-window (string-append "RW." NAME)
"Rectangle"
(position 0.0 0.0 0.0) (position 5.0 3.0 0.0)
)
(sdedr:define-constant-profile (string-append "DC." NAME)
"AluminumActiveConcentration" 5.0e18
)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
(string-append "DC." NAME) (string-append "RW." NAME)
)
;N doping
; Constant doping profile in a box-shaped area
(define NAME "N")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "AluminumActiveConcentration"
(sdedr:define-refinement-window (string-append "RW." NAME)
"Rectangle"
(position 0.0 3.0 0.0) (position 5.0 8.0 0.0)
)
(sdedr:define-constant-profile (string-append "DC." NAME)
"NitrogenActiveConcentration" 1.0e16
)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
(string-append "DC." NAME) (string-append "RW." NAME)
)
;NN doping
; Constant doping profile in a box-shaped area
(define NAME "NN")
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "AluminumActiveConcentration"
(sdedr:define-refinement-window (string-append "RW." NAME)
"Rectangle"
(position 0.0 8.0 0.0) (position 5.0 10.0 0.0)
)
(sdedr:define-constant-profile (string-append "DC." NAME)
"NitrogenActiveConcentration" 1.0e20
)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
(string-append "DC." NAME) (string-append "RW." NAME)
)
;************************************ Contact define *******************************
;Anode Contact
; - Assign a user-given contact to the surface elements (2d: edges, 3d: faces)
; - identified by the user-given point.
(define CONT "anode")
(define POINT (position 2.5 0.0 0.0))
(sdegeo:define-contact-set CONT 4.0 (color:rgb 1.0 0.0 0.0 ) "##" )
(sdegeo:set-current-contact-set CONT)
; - 2D:
(sdegeo:define-2d-contact (find-edge-id POINT) CONT)
; - 3D:
; (sdegeo:define-3d-contact (find-face-id POINT) CONT)
;Cathode Contact
; - Assign a user-given contact to the surface elements (2d: edges, 3d: faces)
; - identified by the user-given point.
(define CONT "cathode")
(define POINT (position 2.5 10.0 0.0))
(sdegeo:define-contact-set CONT 4.0 (color:rgb 1.0 0.0 0.0 ) "##" )
(sdegeo:set-current-contact-set CONT)
; - 2D:
(sdegeo:define-2d-contact (find-edge-id POINT) CONT)
; - 3D:
; (sdegeo:define-3d-contact (find-face-id POINT) CONT)
;******************************** Mesh ****************************************
(sdedr:define-refeval-window
"RW.Global" "Rectangle"
(position 0.0 0.0 0.0)
(position 5.0 10.0 0.0)
)
(sdedr:define-refinement-size
"RD.Global"
2.0 0.5
0.03 0.03
)
(sdedr:define-refinement-function "RD.Global"
"DopingConcentration" "MaxTransDiff" 1.0)
(sdedr:define-refinement-function "RD.Global"
"hDensity" "MaxTransDiff" 1.0)
(sdedr:define-refinement-function "RD.Global"
"ElectrostaticPotential" "MaxTransDiff" 1.0)
(sdedr:define-refinement-function "RD.Global"
"MaxLenInt" "Silicon" "Contact" 1e-3 1.2
)
(sdedr:define-refinement-placement "RPL.Global"
"RD.Global" "RW.Global")
(sde:build-mesh "-AI" "n1")
|
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| ;;;;;;;;;;;;;;;;;;;;;;;;;;; pp2-des.cmd ;;;;;;;;;;;;;;;;;;;;;;
File {
Grid= "n1_msh.tdr"
Current = "n2_des.plt"
Plot = "n2_des.tdr"
Output= "n2_des.log"
Parameter= "pp2_des.par"
}
Electrode{
{Name= "anode" Voltage= 0.0}
{Name= "cathode" Voltage= 0.0}
}
Physics(Material="Silicon"){
Fermi
Mobility(
DopingDependence
Enormal
HighFieldSaturation
)
Recombination(
SRH(Dopingdependence)
Auger
)
EffectiveIntrinsicDensity(OldSlotboom)
}
Math {
Digits= 7
Extrapolate
ErrEff(electron)= 1e4
ErrEff(hole)= 1e4
RHSmin= 1e-20
RHSmax= 1e30
RHSFactor= 1e30
Notdamped= 20
Iterations= 15
ExitOnFailure
eMobilityAveraging= ElementEdge
hMobilityAveraging= ElementEdge
ExtendedPrecision(128)
NumberofThreads= 4
}
Solve {
*- Initial Solution
Coupled(Iterations=1000 LineSearchDamping=1e-2){ Poisson }
Coupled(Iterations=1000 LineSearchDamping=1e-2){ Poisson Electron }
Coupled(Iterations=1000 LineSearchDamping=1e-2){ Poisson Electron Hole }
NewCurrentFile= "IV_"
Quasistationary (
Initialstep= 1e-3 Increment= 1.5 Decrement= 2.0
Maxstep= 0.05 Minstep= 1.e-10
Goal { Name="anode" Voltage= 10.0 }
) { Coupled { Poisson Electron Hole } }
}
|
仿真结果
图就不放了。最终器件仿真结果应该是一个PiN二极管，对其进行正偏压副偏压扫描。
